Glass passivated junction semiconductor devices

Details Glass passivated junction semiconductor devices Glass passivated junction semiconductor devices

1977-04-27

1978-03-21

Miller, Jr., Stanley D.

Stock material or miscellaneous articles

Composite

Of bituminous or tarry residue

357 56, 357 59, 357 73, 428331, 428428, H01L 2934

Patent

active

040806219

ABSTRACT:
This invention is directed to a semiconductor device comprised of a body of semiconductor material having at least one p-n junction terminating at an exposed surface of the body. The p-n junction is passivated at its termination point by a first, thin glass layer and a second glass layer disposed over the first thin glass layer. The second glass layer is thicker than the first glass layer and includes a predetermined amount of a suitable filler material.

REFERENCES:
patent: 3247428 (1966-04-01), Perri et al.
patent: 3837002 (1974-09-01), Sakamoto et al.
patent: 4002541 (1977-01-01), Streander

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