Glass-moulded type semiconductor device

Details Glass-moulded type semiconductor device Glass-moulded type semiconductor device

1980-09-16

1984-02-07

James, Andrew J.

Electricity: conductors and insulators

Feedthrough or bushing

Compression

357 54, 357 76, 357 79, 357 81, 174 52H, 65 36, 65 52, 65 53, 65 54, 65 608, H01L 2330, H01L 2934, H01L 2302, H01L 2342

Patent

active

044306644

ABSTRACT:
A glass-moulded type semiconductor device comprising semiconductor arrangement composed of at least one semiconductor pellet having at least one P-N junction, edges of which are exposed to peripheral surfaces of the semiconductor pellet, a pair of electrodes secured to opposite ends of the semiconductor arrangement through a brazing material, a first mould glass layer secured to the entire circumferential surface of the semiconductor arrangement and extending to the surfaces of the electrodes for passivating the P-N junction of the semiconductor arrangement, and a second mould glass in the form of at least one layer secured to the surface of said first mould glass layer.
Thermal expansion coefficient of each of the mould glass layers is selected in such a manner that the thermal expansion coefficient of the first glass layer is larger than the apparent thermal expansion coefficient of a semiconductor assembly consisting of the semiconductor arrangement and the brazing material, and the thermal expansion coefficient of said second mould glass layer is larger than that of the first mould glass layer.

REFERENCES:
patent: 1968854 (1934-08-01), Pirani et al.
patent: 3250631 (1966-05-01), Lusher
patent: 3261075 (1966-07-01), Carman
patent: 3271124 (1966-09-01), Clark
patent: 3341649 (1967-09-01), James
patent: 3368024 (1968-02-01), Bishop
patent: 3436109 (1969-04-01), Loose
patent: 3913127 (1975-10-01), Suzuki et al.
patent: 3996602 (1976-12-01), Goldberg et al.
patent: 4059837 (1977-11-01), Suzuki et al.

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