Glass encapsulation of semiconductor devices

Details Glass encapsulation of semiconductor devices Glass encapsulation of semiconductor devices

1979-11-06

1981-07-21

McCarthy, Helen M.

Compositions

Electrically conductive or emissive compositions

Metal compound containing

106 47R, C03C 316, C03C 312, H01B 108

Patent

active

042797853

ABSTRACT:
A low melting point glass for semiconductor device encapsulation. The glass is based on the lead oxide/phosphorus pentoxide/vanadium pentoxide system and has a thermal coefficient of expansion similar to that of a copper alloy lead frame. The glass is applied to a device as a frit which is then heat fused.

REFERENCES:
patent: 3278317 (1966-10-01), Blair et al.
patent: 3518209 (1970-06-01), Provance
patent: 3520831 (1970-07-01), Trap et al.
patent: 3885974 (1975-05-01), Asahara et al.
Hackh's Chemical Dictionary-4th edition-pub. McGraw-Hill Co. NY p. 141 "Cellosolve".

Affiliated with

Also associated with

Rating

Glass encapsulation of semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Glass encapsulation of semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Glass encapsulation of semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2432958