Patent
1974-11-22
1977-01-11
Edlow, Martin H.
357 4, H01L 4500
Patent
active
040030750
ABSTRACT:
The conductivity of a body of ionically impermeable glassy amorphous material is controllably altered by driving or diffusing suitable impurities into the body of material. Impurities are driven into the glassy body by, for example, disposing a source of impurity ions on the surface and applying an electric field across the body. Preferably, the glassy amorphous material is heated so that its temperature is above a thermal diffusion temperature characteristic of the particular material and the particular impurity but is below the temperature at which an appreciable proportion of the impurities would be structurally incorporated into the material. Alternatively, impurities can be driven into a glassy body by ion bombardment. And in some material-impurity combinations, it is sufficient merely to heat the material above the thermal diffusion temperature in the presence of the dopant. The method provided by the invention can be used to render insulating glassy materials effectively semiconducting or to alter the conductive properties of glassy semiconductors. It can thus be used to produce a wide variety of bulk semiconductor devices such as switches as well as single junction and multiple junction semiconductor devices.
REFERENCES:
patent: 3451126 (1969-06-01), Yamamoto
patent: 3679947 (1972-07-01), Chakravertz
Edlow Martin H.
Innotech Corporation
LandOfFree
Glass electronic devices employing ion-doped insulating glassy a does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Glass electronic devices employing ion-doped insulating glassy a, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Glass electronic devices employing ion-doped insulating glassy a will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1747535