Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2011-01-18
2011-01-18
Garber, Charles D (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257SE33068
Reexamination Certificate
active
07872281
ABSTRACT:
A glass-coated light-emitting element10of the invention has a semiconductor light-emitting element2having a surface on which no electrode is formed is coated with a glass1, in which a surface of the glass1constitutes a part of a spherical surface broader than a hemispherical surface, the refractive index of the glass1at an emission peak wavelength of the semiconductor light-emitting element2is 1.7 or more, and the ratio of the diameter of the above-mentioned spherical surface to the maximum diameter of a surface of the semiconductor light-emitting element2on which electrodes are formed is 1.8 to 3.5, whereby light emitted from the light-emitting element can be efficiently introduced into a light control unit, and alignment with a lens or a light pipe, which has hitherto been made, becomes unnecessary.
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Matsumoto Syuji
Nakamura Nobuhiro
Sekine Minoru
Asahi Glass Company Limited
Garber Charles D
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Patel Reema
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