Glass-ceramics for semiconductor doping

Compositions: coating or plastic – Coating or plastic compositions – Marking

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C03C 322, C03C 308, C03C 310

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active

039619699

ABSTRACT:
Disclosed is a method for diffusion doping of silicon and germanium semiconductors by the vapor phase transport of B.sub.2 O.sub.3 from a solid B.sub.2 O.sub.3 source to the semiconductor, wherein the solid B.sub.2 O.sub.3 source comprises a rigid, dimensionally stable, glass-ceramic body formed from certain alkaline earth aluminoborosilicate parent glass compositions. The glass-ceramic bodies contain up to 60 mole % of B.sub.2 O.sub.3 and are dimensionally stable at doping temperatures of 1050.degree.C and higher.

REFERENCES:
patent: 3022179 (1962-02-01), Morrissey
patent: 3117881 (1964-01-01), Henry et al.
patent: 3540895 (1970-11-01), Scheidler

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