Glass-ceramic-based semiconductor-on-insulator structures...

Details Glass-ceramic-based semiconductor-on-insulator structures... Glass-ceramic-based semiconductor-on-insulator structures...

2011-06-14

2011-06-14

Blum, David S (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S352000, C257SE21001, C257SE27112, C257SE29072, C438S426000, C438S480000

Reexamination Certificate

active

07960736

ABSTRACT:
The present invention relates to a semiconductor-on-insulator structure including a semiconductor component comprised of substantially single-crystal semiconductor material layer and a single-crystal semiconductor material with an enhanced oxygen content layer; an oxide glass material layer; and a glass-ceramic layer.

REFERENCES:
patent: 5968857 (1999-10-01), Pinckney
patent: 6335231 (2002-01-01), Yamazaki et al.
patent: 2004/0229444 (2004-11-01), Couillard et al.
patent: 1798765 (2007-06-01), None
patent: 03/097552 (2003-11-01), None
patent: WO2005/029576 (2005-03-01), None
patent: 2006/023289 (2006-03-01), None

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