Glass-based SOI structures

Details Glass-based SOI structures Glass-based SOI structures

2008-04-09

2009-10-20

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C257S347000, C257SE27112, C257SE21480

Reexamination Certificate

active

07605053

ABSTRACT:
Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016Ω-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000° C.). The bond strength between the semiconductor layer and the support substrate is preferably at least 8 joules/meter2. The semiconductor layer can include a hybrid region in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic. The support substrate preferably includes a depletion region which has a reduced concentration of the mobile positive ions.

REFERENCES:
patent: 4294602 (1981-10-01), Horne
patent: 4737756 (1988-04-01), Bowman
patent: 5273827 (1993-12-01), Francis
patent: 5343064 (1994-08-01), Spangler et al.
patent: 5374564 (1994-12-01), Bruel
patent: 5395481 (1995-03-01), McCarthy
patent: 5442205 (1995-08-01), Brasen et al.
patent: 5559043 (1996-09-01), Bruel
patent: 5854123 (1998-12-01), Sato et al.
patent: 5909627 (1999-06-01), Egloff
patent: 5950067 (1999-09-01), Maegawa et al.
patent: 5980349 (1999-11-01), Hoffman et al.
patent: 6010579 (2000-01-01), Henley et al.
patent: 6048411 (2000-04-01), Henley et al.
patent: 6107653 (2000-08-01), Fitzgerald
patent: 6140209 (2000-10-01), Iwane et al.
patent: 6150239 (2000-11-01), Goesele et al.
patent: 6211041 (2001-04-01), Ogura
patent: 6251754 (2001-06-01), Ohshima et al.
patent: 6309950 (2001-10-01), Forbes
patent: 6319867 (2001-11-01), Chacon et al.
patent: 6323108 (2001-11-01), Kub et al.
patent: 6335231 (2002-01-01), Yamazaki et al.
patent: 6391740 (2002-05-01), Cheung et al.
patent: 6416578 (2002-07-01), Nakano et al.
patent: 6426154 (2002-07-01), Naba et al.
patent: 6486008 (2002-11-01), Lee
patent: 6537938 (2003-03-01), Miyazaki
patent: 6573126 (2003-06-01), Cheng et al.
patent: 6593641 (2003-07-01), Fitzergald
patent: 6610582 (2003-08-01), Stewart
patent: 6823693 (2004-11-01), Hoffman et al.
patent: 6825099 (2004-11-01), Yanagita et al.
patent: 6825909 (2004-11-01), Walker et al.
patent: 7192844 (2007-03-01), Couillard et al.
patent: 2002/0033189 (2002-03-01), Macris
patent: 2004/0020173 (2004-02-01), Cho
patent: 0539741 (1993-05-01), None
patent: 0557588 (1993-09-01), None
patent: 07-247134 (1995-09-01), None
patent: 11-329996 (1999-11-01), None
M. Bruel; “Silicon on insulator material technology”; Electronics Letter, Jul. 1995; vol. 13, No. 14; pp. 1201-1202.
Cioccio et al.; “Silicon carbide on insulator formation using the Smart Cut Process”; Electronics letter; Jun. 1996; vol. 32; pp. 1144-1145.
Marshall et al.; “Measurement of adherence of residually stressed thin films by indentation. I. Mechanics of interface delamination”; J. Apl. Phys; Nov. 1984; vol. 56, No. 10; pp. 2632-2638.
Bister et al; “Ranges of the 0.3-2 MeV H+and 0.7-2 MeV H+2ions in Si and Ge”; Radiation Effects; 1982; vol. 59; pp. 199-202.
Lee, et al.: “Semiconductor layer transfer by anodic wafer bonding”; IEEE International SOI Conference; Oct. 1997; pp. 40-41.
Spangler et al.: “A technology for high-performance single-crystal silicon-on-insulator transistors”; IEEE Electron Device Letters; vol. 8, No. 4: Apr. 1987; pp. 137-139.
“Resistivity of Glass”, http:/hypertextbook.com/facts/2004/janeGolubovskaya.shtml.

Affiliated with

Also associated with

Rating

Glass-based SOI structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Glass-based SOI structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Glass-based SOI structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4120627