Glass-based SOI structures

Details Glass-based SOI structures Glass-based SOI structures

2005-06-10

2008-07-15

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C257SE21480, C438S455000

Reexamination Certificate

active

07399681

ABSTRACT:
A method of forming a semiconductor on glass structure includes: establishing an exfoliation layer on a semiconductor wafer; contacting the exfoliation layer of the semiconductor wafer to a glass substrate; applying pressure, temperature and voltage to the semiconductor wafer and the glass substrate, without a vacuum atmosphere, such that a bond is established therebetween via electrolysis; and applying stress such that the exfoliation layer separates from the semiconductor wafer and remains bonded to the glass substrate.

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