Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2005-06-23
2008-08-12
Smith, Bradley K (Department: 2891)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S458000, C257SE21122
Reexamination Certificate
active
07410883
ABSTRACT:
Methods and apparatus provide for: a semiconductor wafer; at least one porous layer in the semiconductor wafer; an epitaxial semiconductor layer directly or indirectly on the porous layer; and a glass substrate bonded to the epitaxial semiconductor layer via electrolysis.
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Corning Incorporated
Schaeberle Timothy M.
Smith Bradley K
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