Glass-based semiconductor on insulator structures and...

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates

Reexamination Certificate

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C438S458000, C257SE21122

Reexamination Certificate

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07410883

ABSTRACT:
Methods and apparatus provide for: a semiconductor wafer; at least one porous layer in the semiconductor wafer; an epitaxial semiconductor layer directly or indirectly on the porous layer; and a glass substrate bonded to the epitaxial semiconductor layer via electrolysis.

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