Gigaohm load resistor for BICMOS process

Details Gigaohm load resistor for BICMOS process Gigaohm load resistor for BICMOS process

1989-06-30

1991-09-10

James, Andrew J.

357 236, 357 43, 357 51, 357 59, H01L 2702, H01L 2968, H01L 2978, H01L 2904

Patent

active

050478265

ABSTRACT:
An integrated circuit including a high value resistor (17d) is formed by using an amorphous silicon layer. The amorphous silicon layer may also be used to form the second plate (34) of a capacitor (17c) and a fuse (30). In the second embodiment of the invention, the amorphous silicon layer (92) is formed after the formation of the devices to avoid any additional high temperature cycles.

REFERENCES:
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patent: 4602421 (1986-07-01), Lee et al.
patent: 4679170 (1987-07-01), Bourassa et al.
patent: 4737838 (1988-04-01), Watanabe
patent: 4762801 (1988-08-01), Kapoor
patent: 4876220 (1989-10-01), Mohsen et al.
patent: 4876668 (1989-10-01), Thakoor et al.
patent: 4903111 (1990-02-01), Takemae et al.

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