Gigahertz rate integrated circuit package incorporating semicond

Details Gigahertz rate integrated circuit package incorporating semicond Gigahertz rate integrated circuit package incorporating semicond

1987-10-14

1989-01-31

LaRoche, Eugene R.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific current responsive fault sensor

357 71, 357 74, 357 80, 361414, H01L 2348, H01L 2944, H01L 2960, H05K 111

Patent

active

048019968

ABSTRACT:
An integrated circuit package suitable for gigahertz range operation with many power lines is provided with a separate power line structure comprising a uniformly and degenerately doped silicon substrate, a bifurcated thin-film insulator, and area-filling wedge-shaped power lines deposited over the insulator. This arrangement provides a high capacitance distributed right up to the die-interfacing region of the power lines. The effect is to minimize noise that could otherwise be introduced near the die-interfacing region at high frequencies. In addition, the power line structure provides a stable bias at the die-interfacing region of a separate signal line structure for resistive termination of digital signal lines.

REFERENCES:
patent: 4432007 (1984-02-01), Cady
patent: 4484215 (1984-11-01), Pappas
patent: 4685998 (1987-08-01), Quinn et al.
IEEE Standard Dictionary of Electrical and Electronics Terms, Third Edition, 1984, p. 815.
CRC Handbook of Chemistry and Physics, 66th edition, 1985, pp. E-99 to E-102.
"A GaAs 12-Bit Digital-to-Analog Converter", by Hsieh, Knotts & Baldwin, CH 2182-4/85/0000-0187 1985 IEEE, pp. 187-190.

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