Stock material or miscellaneous articles – Composite – Of silicon containing
Reexamination Certificate
2007-01-02
2007-01-02
McNeil, Jennifer C. (Department: 1775)
Stock material or miscellaneous articles
Composite
Of silicon containing
C428S469000, C428S472000, C428S701000, C428S702000, C427S543000, C427S586000, C427S596000, C427S419200
Reexamination Certificate
active
11000161
ABSTRACT:
SrBi2Nb2O9(SBN) thin films are deposited on Pt/TiO2/SiO2/Si substrates using off-axis pulsed laser deposition technique. Off-axis laser ablation avoids plasma damaging of the surface of SBN thin films and is favorable to grow films along the polarization axis (a–b plane). SBN thin films are grown at 350° C. substrate temperature, with 5 mm away from the plasma focus, and annealed at 750° C. for 1 hour in oxygen ambient. These SBN thin films exhibited giant remnant polarization (Pr) of 50 μC/cm2with coercive field of 190 kV/cm. The fatigue endurance of these SBN thin films was measured at 400 kV/cm and showed minimal (<20%) polarization degradation of up to 1010switching cycles. The leakage current density of SBN thin films was found to be about 2×107up to an applied field of 100 kV/cm. The above-mentioned properties of off-axis deposited SBN thin films, makes it a good material for NVRAM devices.
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Battacharya Pijush
Das Rasmi R.
Katiyar Ram S.
Hoglund Heath W.
Hoglund & Pamias, P.S.C.
McNeil Jennifer C.
Speer Timothy M.
University of Puerto Rico
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