Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-04-10
2007-04-10
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S414000, C257S423000, C257SE27103
Reexamination Certificate
active
10470956
ABSTRACT:
The present invention relates to a method for producing a GMR structure in which a metallic multiple layer is applied onto a carrier and in which the metallic multiple layer is patterned to produce the GMR structure, the carrier having a structure before the metallic multiple layer is applied and the patterning of the metallic multiple layer is performed by CMP. The present invention also relates to a GMR structure having a carrier and a patterned metallic multiple layer positioned on the carrier, the patterned metallic multiple layer being situated in one or more depressions of the carrier. In addition, the present invention relates to a use of GMR structures.
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Fischer Frank
Gruen Detlef
Hein Peter
Siegle Henrik
Kenyon & Kenyon LLP
Le Dung A.
Robert & Bosch GmbH
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