Giant magnetoresistance structure

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S414000, C257S423000, C257SE27103

Reexamination Certificate

active

10470956

ABSTRACT:
The present invention relates to a method for producing a GMR structure in which a metallic multiple layer is applied onto a carrier and in which the metallic multiple layer is patterned to produce the GMR structure, the carrier having a structure before the metallic multiple layer is applied and the patterning of the metallic multiple layer is performed by CMP. The present invention also relates to a GMR structure having a carrier and a patterned metallic multiple layer positioned on the carrier, the patterned metallic multiple layer being situated in one or more depressions of the carrier. In addition, the present invention relates to a use of GMR structures.

REFERENCES:
patent: 5306573 (1994-04-01), Piirot et al.
patent: 5419806 (1995-05-01), Huebner
patent: 5650958 (1997-07-01), Gallagher et al.
patent: 6156656 (2000-12-01), Kobayashi et al.
patent: 6445003 (2002-09-01), Chang et al.
patent: 43 14 539 (1994-11-01), None
patent: 0 727 773 (1996-08-01), None
patent: 62-043811 (1987-02-01), None
patent: 9-219546 (1997-08-01), None
patent: WO 00/38191 (2000-06-01), None
patent: WO 00/52701 (2000-09-01), None
Ross, M., “GMR: An Attractive Resistance” Europhysics News, Berlin, Germany, Jul. 1997, pp. 114-118.
H. Boeve et al. “integration of spin valves and GaAs diodes in magnetorsistive random access memory cells”, 1999, Proceedings of the 43rdannual Conference On Magnetism And Magnet materials, Journal of Applied Physics, vol. 85, No. 8, part 2, 1999, pp. 4779-4781.
Y.Z. Hu et al., “Chemical-mechanical polishing as an enabling technology for giant magnetoresistance devices”, Thin Solid Films, 308-309, 1997, pp. 555-561.
E. Hufgardt et al. “GMR-Sensoren fur kontaklose Positionmessungen” Electronik Information, No. 10-1997, pp. 86-87, (English abstract).

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