Gettering treatment process

Details Gettering treatment process Gettering treatment process

1992-03-17

1993-07-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 11, 437 13, 148DIG60, H01L 2100, H01L 2102, H01L 2130, H01L 21306

Patent

active

052253554

ABSTRACT:
A gettering treatment process comprises the step of irradiating an ultraviolet light onto an insulating layer (a silicon oxide thin layer formed by thermally oxidizing silicon), in a chlorine-containing gas atmosphere. The ultraviolet light excites and dissociates the chlorine-containing gas thereby to generate chlorine radicals which uniformly penetrate the insulating layer, and serve to trap metal impurities within the silicon oxide thin layer.

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Romen, Hydrogen, Chloride and Chlorine Gettering, J. Electrochem. Soc., vol. 119, No. 3, 1972, pp. 747-752.
Sze, VLSI Technology, p. 472, 1983, McGraw-Hill.
Solid State Technology, vol. 22, No. 8, Aug. 1979, pp. 113-119; J. Monkowski: "Role of chlorine in silicon oxidation."
Japanese Journal of Applied Physics, Supplements 16th Int. Conf. Solid State Devices and Materials, Kobe, 30th Aug.-1st Sep. 1984, pp. 50-51, Tokyo, JP; K. Horioka et al.: "XeCl excimer laser oxidation of Si employing 02/Cl2 gas mixture."
Solid State Technology, vol. 25, No. 7, Jul. 1982, pp. 83-86, Port Washington, New York, U.S.; T. Hattori: "Chlorine oxidation and annealing in the fabrication of high performance LSI devices."

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