Semiconductor device manufacturing: process – Gettering of substrate – By implanting or irradiating
Patent
1998-06-04
2000-09-05
Dang, Trung
Semiconductor device manufacturing: process
Gettering of substrate
By implanting or irradiating
438471, 438143, 438310, 438402, 148DIG50, H01L 21322
Patent
active
061142239
ABSTRACT:
In one aspect, the invention pertains to a method of forming a gettering region within an Si semiconductor wafer, the method including: a) providing a semiconductor material wafer; b) providing a background region within the semiconductor material wafer, the background region being doped with a first-type conductivity enhancing dopant, the first-type conductivity enhancing dopant being either n-type or p-type; c) implanting a second-type conductivity enhancing dopant into the background region to form a second-type implant region entirely contained within the background region, the second-type conductivity enhancing dopant being of an opposite type than the first-type conductivity enhancing dopant of the background region; and d) implanting a neutral-conductivity-type conductivity enhancing dopant into the second-type implant region to form a metals gettering damage region entirely contained within the second-type implant region. The invention also pertains to gettering region structures.
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Handout, 2nd annual "Smart and Economic Device and Process Designs for ULSI Using MeV Technology" Seminar, sponsored by Genus, Inc., Jul. 20, 1994, 10 pages.
Gonzalez Fernando
Honeycutt Jeffrey W.
Dang Trung
Micro)n Technology, Inc.
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