Fishing – trapping – and vermin destroying
Patent
1987-06-02
1989-12-05
Hearn, Brian E.
Fishing, trapping, and vermin destroying
148DIG3, 148DIG24, 148DIG60, 148DIG76, 148DIG83, 148DIG97, 148DIG127, 148 332, 156692, 357 91, 437 24, 437 25, 437 82, 437 85, 437247, 437939, H01L 21322, H01L 21265
Patent
active
048852570
ABSTRACT:
A semiconductor substrate and process for making are disclosed. The substrate is suitable for use in manufacturing large scale integrated circuits. The process comprises the steps of heating a semiconductor substrate at a temperature not lower than 1100.degree. C., implanting electrically inert impurities into the major surface of the substrate, heating the substrate at a temperature ranging from 600.degree. to 900.degree. C. and providing a single crystal semiconductor layer.
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Craven et al., "Internal Gettering of Silicon" Solid State Technology, Jul. 1981, pp. 55-61.
Hu, "Precipitation of Oxygen in Silicon: Some Phenomena and a Nucleation Model," J. Appl. Phys., vol. 52, No. 6, Jun. 1981, pp. 3974-3984.
Bunch William D.
Hearn Brian E.
Kabushiki Kaisha Toshiba
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