Gettering of unwanted metal impurity introduced into semiconduct

Details Gettering of unwanted metal impurity introduced into semiconduct Gettering of unwanted metal impurity introduced into semiconduct

1994-03-01

1996-01-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 67, 437 60, 437919, H01L 21306

Patent

active

054828694

ABSTRACT:
After a trench is formed in a semiconductor substrate, a semiconductor film is formed on the inner wall of the trench. Annealing is performed in a predetermined condition to subject an unwanted metal impurity to gettering into the semiconductor film. The semiconductor film is then oxidized.

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