Semiconductor device manufacturing: process – Including control responsive to sensed condition – Electrical characteristic sensed
Patent
1996-09-10
1998-12-01
Dang, Thi
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Electrical characteristic sensed
438474, 438798, H05H 100, H01L 2100
Patent
active
058438009
ABSTRACT:
Apparatus controls a wafer potential in a plasma system when the plasma is off to keep the wafer slightly negative at all times in order to reduce and eliminate the collection of charged particles on the wafer. The apparatus allows the wafer bias to be reduced to a small negative voltage and then holds that voltage. This greatly reduces the net positive flux to the wafer. A diode and a programmed power supply hold a minimum negative voltage on the back of the wafer electrode when the plasma density is decaying to zero.
REFERENCES:
patent: 4222838 (1980-09-01), Bhagat et al.
patent: 5102496 (1992-04-01), Savas
patent: 5147493 (1992-09-01), Nishimura et al.
patent: 5203945 (1993-04-01), Hasegawa et al.
patent: 5273610 (1993-12-01), Thomas, III et al.
patent: 5332441 (1994-07-01), Barnes et al.
patent: 5414324 (1995-05-01), Roth et al.
patent: 5433813 (1995-07-01), Kuwabara
patent: 5460684 (1995-10-01), Saeki et al.
Costrini Gregory
Keller John H.
Dang Thi
International Business Machines - Corporation
Mortinger Alison
LandOfFree
Gettering of particles from an electro-negative plasma with insu does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gettering of particles from an electro-negative plasma with insu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gettering of particles from an electro-negative plasma with insu will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2395242