Gettering method for semiconductor wafers

Fishing – trapping – and vermin destroying

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437 9, 437946, 134 1, H01L 21304, H01L 21463

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active

049719203

ABSTRACT:
An ultrasonic wave is propagated to the surface of a semiconductor wafer in pure water to effect the gettering treatment with respect to the surface of the semiconductor wafer. Mechanical damages are formed on the surface of the semiconductor wafer to which the ultrasonic wave is applied, and at the same time the surface of the semiconductor wafer is cleaned. The mechanical damages serve to function as back side damage.

REFERENCES:
patent: 4092176 (1978-05-01), Kozai et al.
Wolf et al., Silicon Processing for the VLSI Era, vol. 1: Process Technology Lattice Press, Sunset Beach, CA (1986), p. 519.

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