Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1983-12-23
1985-03-12
Weisstuch, Aaron
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148 15, 148 203, 156DIG66, 156DIG72, 156DIG82, H01L 21324, H01L 21385
Patent
active
045043345
ABSTRACT:
The disclosure relates to a method for removing the unwanted impurities from an HgCdTe alloy which consists of the steps of depositing a thin film on the order of from about 1 to about 100 microns in thickness of tellurium onto the backside of a mercury cadmium telluride bar to insure the presence of a substantial amount of excess tellurium on the backside of the alloy bar and allow the gettering mechanism to work. A protective film to shield the tellurium film from mercury ambient atmosphere is then optionally placed over the tellurium film. The protective film can be formed of a silicon oxide such as SiO and is preferably in the range of about 1000 angstroms to 10 microns or more in thickness. The bar with the tellurium and protective film thereon is then annealed at a temperature of less than 450.degree. C., preferably about 280.degree. C., for a period of from about one day to about four weeks in a saturated mercury atmosphere to allow the impurities in the alloy to diffuse to the backside thereof and into the tellurium layer. The bulk of the impurities will travel into the tellurium layer within a matter of several days at the preferred temperature noted hereinabove. The tellurium layer and protective film are then removed such as by grinding, etching or other appropriate method to remove the impurities from the alloy bar.
REFERENCES:
patent: 3954518 (1976-05-01), Schmit et al.
patent: 3963540 (1976-06-01), Camp, Jr. et al.
patent: 4116725 (1978-09-01), Shimizu
patent: 4318217 (1982-03-01), Jenner et al.
patent: 4435224 (1984-03-01), Durand
Beck Jeffrey D.
Schaake Herbert F.
Tregilgas John H.
Comfort James T.
Groover III Robert
Sharp Melvin
Texas Instruments Incorporated
Weisstuch Aaron
LandOfFree
Gettering method for mercury cadmium telluride does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gettering method for mercury cadmium telluride, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gettering method for mercury cadmium telluride will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-706539