Gettering method for a semiconductor wafer

Details Gettering method for a semiconductor wafer Gettering method for a semiconductor wafer

1988-11-25

1990-12-25

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 9, 437946, 134 1, H01L 21463, H01L 21304, B08B 312

Patent

active

049803000

ABSTRACT:
When a surface of semiconductor wafer is treated for gettering, ultrasonic waves are caused to propagate along the surface of the semiconductor wafer, through pure water. Mechanical damages are formed on the surface of the semiconductor wafer along which the ultrasonic waves propagated, the damages serving as a back side damage.

REFERENCES:
patent: 4092176 (1978-05-01), Kozai et al.
patent: 4854337 (1989-08-01), Bunkenburg
patent: 4902350 (1990-02-01), Steele
International Electronics, vol. 1, No. 2, Feb. 1961, pp. 27-28: "Ultrasonics Cleans Delicate Parts Really Clean".
JP-A-61 15 334 (Tasu Gijutsu Kenkyusho K.K.) 23-01-1986.
JP-A-61 79 234 (Matsushita Electronics Corp.) 4/1986.
VLSI Process Data Handbook; Toru Hara et al.; 1982, (pp. 271-274).

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