Getterer for multi-layer wafers and method for making same

Details Getterer for multi-layer wafers and method for making same Getterer for multi-layer wafers and method for making same

1996-03-29

1999-04-06

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

With means to absorb or localize unwanted impurities or...

257682, 257912, 438310, 438471, H01L 2358, H01L 2320, H01L 21306

Patent

active

058922920

ABSTRACT:
A getterer structure for dielectrically isolated wafer structures such as bonded wafers. The getterer is a layer of polysilicon along the sidewalls of semiconductor regions isolated from each other by trenches. The polysilicon may be doped. The polysilicon is oxidized and polysilicon deposited to fill voids in the trenches.

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