Getter layer lead structure for eliminating resistance increase

Details Getter layer lead structure for eliminating resistance increase Getter layer lead structure for eliminating resistance increase

1997-09-30

1998-10-27

Evans, Jefferson

Dynamic magnetic information storage or retrieval

Head

Hall effect

360126, G11B 539

Patent

active

058285326

ABSTRACT:
A thin film lead structure resistant to resistance increase phenomenon resulting from contamination by mobile impurities. A thin film lead is disposed proximate to a getter layer material having a higher affinity for mobile impurities that the thin film lead. The getter layer material captures mobile impurities and prevents their migration into the thin film lead. The getter layer material may be formed over and in contact with the thin film lead, may be encapsulated within the thin film lead, or both. The getter layer material comprises a rare earth metal selected from the group consisting of yttrium, scandium, lanthanum, cerium, praseodymium, neodymium, samarium, gadolinium, terbium, dysprosium, holmium, erbium, and ytterbium. The thin film lead is preferably tantalum, but may be selected from the group consisting of niobium, vanadium, chromium, molybdenum, tungsten and iron. An alternate embodiment of the invention includes a transition metal comprising titanium, zirconium, or hafnium as the getter layer. The capture of mobile impurities by the getter layer prevents resistance increase phenomenon and embrittlement to the thin film lead. The thin film lead may be used as a thin film lead to an electrical circuit, the sensor structure in a magnetic head.

REFERENCES:
patent: 3268328 (1966-08-01), Torti, Jr.
patent: 3497402 (1970-02-01), Douglass et al.
patent: 4914538 (1990-04-01), Howard et al.
patent: 5011742 (1991-04-01), Fife et al.
patent: 5171379 (1992-12-01), Kumar et al.
patent: 5268806 (1993-12-01), Goubau et al.
patent: 5302461 (1994-04-01), Anthony
patent: 5327313 (1994-07-01), Nishioka et al.
patent: 5458908 (1995-10-01), Krounbi et al.
patent: 5467881 (1995-11-01), Gill
patent: 5473492 (1995-12-01), Terunuma et al.
patent: 5491600 (1996-02-01), Chen et al.
patent: 5492720 (1996-02-01), Gill et al.
patent: 5508866 (1996-04-01), Gill et al.
patent: 5557491 (1996-09-01), Gill et al.
patent: 5568335 (1996-10-01), Fontana et al.
patent: 5588199 (1996-12-01), Krounbi et al.
patent: 5638235 (1997-06-01), Gill et al.
patent: 5666246 (1997-09-01), Gill et al.
patent: 5668685 (1997-09-01), Soeya et al.
patent: 5668686 (1997-09-01), Shouji et al.
W-K. Chu and J. K. Howard, "Oxygen Gettering in Transition Metals for Stable Low Barrier Height Schottky Diodes", IBM Technical Disclosure Bulletin, vol. 21, No. 3, Aug. 1978, pp. 1054-1057.

Affiliated with

Also associated with

Rating

Getter layer lead structure for eliminating resistance increase does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Getter layer lead structure for eliminating resistance increase , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Getter layer lead structure for eliminating resistance increase will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1618546