Germanium substrate-type materials and approach therefor

Details Germanium substrate-type materials and approach therefor Germanium substrate-type materials and approach therefor

2005-07-22

2009-02-24

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With means to increase current gain or operating frequency

C257S063000, C257S064000, C257S065000, C257SE21201, C438S341000, C438S413000, C438S416000, C438S350000

Reexamination Certificate

active

07495313

ABSTRACT:
Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices.

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