Germanium substrate-type materials and approach therefor

Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Using epitaxial lateral overgrowth

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S413000, C438S416000, C438S481000, C438S508000

Reexamination Certificate

active

07919381

ABSTRACT:
Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices.

REFERENCES:
patent: 5371037 (1994-12-01), Yonehara
patent: 5712199 (1998-01-01), Nakagawa et al.
patent: 5750000 (1998-05-01), Yonehara et al.
patent: 5755914 (1998-05-01), Yonehara
patent: 5763288 (1998-06-01), Sakaguchi et al.
patent: 5840616 (1998-11-01), Sakaguchi et al.
patent: 5868947 (1999-02-01), Sakaguchi et al.
patent: 5970361 (1999-10-01), Kumomi et al.
patent: 5997638 (1999-12-01), Copel et al.
patent: 6106613 (2000-08-01), Sato et al.
patent: 6140209 (2000-10-01), Iwane et al.
patent: 6143628 (2000-11-01), Sato et al.
patent: 6150031 (2000-11-01), Yonehara
patent: 6156624 (2000-12-01), Yamagata et al.
patent: 6190937 (2001-02-01), Nakagawa et al.
patent: 6211038 (2001-04-01), Nakagawa et al.
patent: 6258698 (2001-07-01), Iwasaki et al.
patent: 6306729 (2001-10-01), Sakaguchi et al.
patent: 6331208 (2001-12-01), Nishida et al.
patent: 6382292 (2002-05-01), Ohmi et al.
patent: 6391743 (2002-05-01), Iwane et al.
patent: 6429095 (2002-08-01), Sakaguchi et al.
patent: 6452091 (2002-09-01), Nakagawa et al.
patent: 6475323 (2002-11-01), Ohmi et al.
patent: 6537370 (2003-03-01), Hernandez et al.
patent: 6566235 (2003-05-01), Nishida et al.
patent: 6613678 (2003-09-01), Sakaguchi et al.
patent: 6639327 (2003-10-01), Momoi et al.
patent: 6677183 (2004-01-01), Sakaguchi et al.
patent: 6746559 (2004-06-01), Ohmi et al.
patent: 6756289 (2004-06-01), Nakagawa et al.
patent: 6774015 (2004-08-01), Cohen et al.
patent: 6787805 (2004-09-01), Takizawa et al.
patent: 6891578 (2005-05-01), Yonehara et al.
patent: 6972215 (2005-12-01), Sakaguchi et al.
patent: 7015507 (2006-03-01), Yonehara et al.
patent: 7029950 (2006-04-01), Yonehara et al.
patent: 7341923 (2008-03-01), Yonehara
patent: 7399693 (2008-07-01), Sekiguchi et al.
patent: 7622363 (2009-11-01), Yonehara et al.
patent: 7755109 (2010-07-01), Atwater et al.
patent: 2005/0124137 (2005-06-01), Yonehara
patent: 2006/0208341 (2006-09-01), Atwater et al.
patent: 2007/0224786 (2007-09-01), Brabant et al.
patent: 2007/0231488 (2007-10-01), Von Kaenel
patent: 10-256169 (1998-09-01), None
patent: 03-096390 (2003-11-01), None
Ammar Nayfeh, et al., “Fabrication of High-Quality p-MOSFET in Ge Grown Heteroepitaxially on Si”, IEEE Electron Device Letters, vol. 26, No. 5, May 2005, pp. 311-313.
Ammar Nayfeh, et al., “Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality”, Applied Physics Letters, vol. 85, No. 14, Oct. 4, 2004, pp. 2815-2817.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Germanium substrate-type materials and approach therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Germanium substrate-type materials and approach therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Germanium substrate-type materials and approach therefor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2675328

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.