Germanium substrate-type materials and approach therefor

Details Germanium substrate-type materials and approach therefor Germanium substrate-type materials and approach therefor

2011-04-05

2011-04-05

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Using epitaxial lateral overgrowth

C438S413000, C438S416000, C438S481000, C438S508000

Reexamination Certificate

active

07919381

ABSTRACT:
Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices.

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