Germanium solar cell and method for the production thereof

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

Reexamination Certificate

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Reexamination Certificate

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07964789

ABSTRACT:
A method is disclosed for passivating and contacting a surface of a germanium substrate. A passivation layer of amorphous silicon material is formed on the germanium surface. A contact layer of metal is then formed on the passivation. The structure is heated so that the germanium surface makes contact with the contact layer. Thus, a passivated germanium surface is disclosed, as well as a solar cell comprising such a structure.

REFERENCES:
patent: 4319395 (1982-03-01), Lund et al.
patent: 4468853 (1984-09-01), Morita et al.
patent: 4473597 (1984-09-01), Pankove et al.
patent: 4602120 (1986-07-01), Wakefield et al.
patent: 4742384 (1988-05-01), Pankove et al.
patent: 4773942 (1988-09-01), Hamakawa et al.
patent: 4926229 (1990-05-01), Nakagawa et al.
patent: 5246744 (1993-09-01), Matsuda et al.
patent: 5437736 (1995-08-01), Cole
patent: 6210991 (2001-04-01), Wenham et al.
patent: 6326540 (2001-12-01), Kilmer et al.
patent: 6339013 (2002-01-01), Naseem et al.
patent: 6982218 (2006-01-01), Preu et al.
patent: 2002/0007793 (2002-01-01), Sakai et al.
patent: 2003/0003693 (2003-01-01), Meier et al.
patent: 2003/0124761 (2003-07-01), Baert et al.
patent: 2003/0211704 (2003-11-01), Shaheen et al.
patent: 1355890 (1974-06-01), None
patent: 56-155526 (1981-12-01), None
patent: 05048127 (1993-02-01), None
patent: WO 89/12321 (1990-06-01), None
patent: WO 01/74708 (2001-10-01), None
D. K. Schroder, D.L. Meier, “Solar Cell Contact Resistance—A Review”, IEEE Transactions on Electron Devices, vol. ED-31 (5), p. 637-647 (1984).
Yong Liu, “High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD”, Ph.D. thesis, Electrical Engineering (Microelectronics), Major Professor: Vikram Dalal, OSTI ID: 803355, Iowa State University, Ames, IA (2002).
Nguyen Van Dong, Y. Fomier and J.Y. Le “Electrical and optical properties of sputtered amorphous silicon films prepared under a reduced pumping speed,” Applied Physics Letters 42 (7), p. 594-596 (1983).
Witvrouw, et al.; Microsystem Technologies 6 (2000) 192-199; “Why CMOS-integrated transducers? A review.”
Singh, et al.; Sensors and Actuators 77 (1999) 133-138; “Strain studies in LPCVD polysilicon for surface micromachined devices.”
Lin et al; J. Electrochem. Soc., vol. 141, No. 9, Sep. 1994, 2559-2563; “Effects of SiH4, GeH4, and B2H6on the Nucleation and Deposition of Polycrystalline Si1-xGexFilms.”
King, et al.; J. Electrochem. Soc., vol. 141, No. 8, Aug. 1994, 2235-2240; “Deposition and Properties of Low-Pressure Chemical-Vapor Deposited Polycrystalline Silicon-Germanium Films”.
Luke et al., ‘Germanium Orthogonal Strip detectors with Amorphous-Semiconductor contacts’, 1999 IEEE Nuclear Science Symposium Conference Record, Seattle WA, Oct. 25-28, 1999.
Luke et al., “Germanium Orthogonal Strip Detectors with Amorphous Semiconductor Contacts”, 2000 IEEE, pp. 201-204.

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