Germanium silicon heterostructure photodetectors

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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C257SE31131, C257S656000, C257S184000, C257S616000

Reexamination Certificate

active

07397101

ABSTRACT:
A horizontal germanium silicon heterostructure photodetector comprising a horizontal germanium p-i-n diode disposed over a horizontal parasitic silicon p-i-n diode uses silicon contacts for electrically coupling to the germanium p-i-n through the p-type doped and n-type doped regions in the silicon p-i-n without requiring direct physical contact to germanium material. The current invention may be optically coupled to on-chip and/or off-chip optical waveguide through end-fire or evanescent coupling. In some cases, the doping of the germanium p-type doped and/or n-type doped region may be accomplished based on out-diffusion of dopants in the doped silicon material of the underlying parasitic silicon p-i-n during high temperature steps in the fabrication process such as, the germanium deposition step(s), cyclic annealing, contact annealing and/or dopant activation.

REFERENCES:
patent: 6897498 (2005-05-01), Gothoskar et al.
Gianlorenzo Masini, et al. “High-Performance p-i-n Ge on Si Photodetectors for the Near Infrared: From Model to Demonstration”, Jun. 2001, 5 pages, vol. 48, No. 6.

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