Germanium/silicon avalanche photodetector with separate...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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C257S436000, C257S440000, C257S616000

Reexamination Certificate

active

11170556

ABSTRACT:
A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor region proximate to a second type of semiconductor region. The first type of semiconductor is to absorb light in a first range of wavelengths and the second type of semiconductor to absorb light in a second range of wavelengths. A multiplication region is defined proximate to and separate from the absorption region. The multiplication region includes an intrinsic semiconductor region in which there is an electric field to multiply the electrons created in the absorption region.

REFERENCES:
patent: 6384462 (2002-05-01), Pauchard et al.
patent: 7082248 (2006-07-01), Morse
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Pauchard, A., et al., “High-Performance InGaAs-on-Silicon Avalanche Photodiodes,” Wednesday Afternoon, OFC 2002, pp. 345-346.
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Emsley, M.K., et al., “High-Speed Resonant-Cavity-Enhances Silicon Photodetectors on Reflecting Silicon-On-Insulator Substrates,” IEEE Photonics Technology Letters, vol. 14, No. 4, Apr. 2002, pp. 519-521.
Shi, J., et al., “Design and Analysis of Separate-Absorption-Transport-Charge-Multiplication Traveling-Wave Avalanche Photodetectors,”Journal of Lightwave Technology,vol. 22, No. 6, Jun. 2004, pp. 1583-1590.
Dosunmu, O.I., et al., “High-Speed Resonant Cavity Enhanced Ge Photodectectors on Reflecting Si Substrates for 1550-nm Operation,” IEEE Photonics Technology Letters, vol. 17, No. 1, Jan. 2005, pp. 175-177.

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