Germanium silicate spin on glass semiconductor device and method

Details Germanium silicate spin on glass semiconductor device and method Germanium silicate spin on glass semiconductor device and method

1994-03-21

1999-06-08

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257644, H01L 2358

Patent

active

059106808

ABSTRACT:
A semiconductor device (11) has a spin on glass layer or region, and the spin on glass has a method of synthesis and use. The spin on glass composition is formed which comprises on the order of 0% to 20% by volume of tetraethylorthosilicate (TEOS), on the order of 0.01% to 20% by volume of tetraethylorthogermanate (TEOG), on the order of 0% to 1% by volume the equivalent of nitric acid (HNO.sub.3), on the order of 70% to 85% by volume of alcohol, and a remaining balance of the spin on glass composition being water. The spin on glass is applied to a semiconductor substrate and heated and/or densified to form the spin on glass layer or region.

REFERENCES:
patent: 4477580 (1984-10-01), Fleming, Jr.
patent: 4654269 (1987-03-01), Lehrer
patent: 4935095 (1990-06-01), Lehrer
patent: 5114738 (1992-05-01), Savage et al.

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