Germanium semiconducting radiation detector with phosphorus impl

Details Germanium semiconducting radiation detector with phosphorus impl Germanium semiconducting radiation detector with phosphorus impl

1980-06-17

1983-11-15

Edlow, Martin H.

Metal treatment

Stock

Ferrous

357 58, 357 91, 148 15, H01L 2714

Patent

active

044159161

ABSTRACT:
Germanium detectors usable for charged particle spectroscopy and capable of enduring overvoltage without impairment are produced by first implanting phosphorus ions of high energy in a small dose and then implanting more phosphorus ions of lower energy in a large dose. The low energy ions reduce surface resistance without impairing the improved properties of withstanding overvoltage that are provided by the high energy implantation. The p.sup.+ contact is provided by boron ion implantation in a conventional manner. "Dead zones" on both sides have been found to have a very small thickness of 0.3 .mu.m.

REFERENCES:
Herzer et al., Nuclear Instruments and Methods, 101 (1972), pp. 31-37.
Hubbard et al., IEEE Trans. on Nuclear Science, vol. NS-24, No. 1, Feb. 1977, pp. 161 et seq.
Hung et al., IBM Tech. Discl. Bull., vol. 17, No. 5, Oct. 1974.

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