Germanium p-i-n photodetector on silicon substrate

Details Germanium p-i-n photodetector on silicon substrate Germanium p-i-n photodetector on silicon substrate

1983-11-21

1985-04-30

James, Andrew J.

357 30, 357 90, 357 40, H01L 2912

Patent

active

045147485

ABSTRACT:
Devices useful, for example, as detectors in telecommunications systems have been formed utilizing a specific structure. In particular, a p-i-n device is fabricated on a silicon substrate having the necessary circuitry for signal processing. This p-i-n device is produced by depositing an intermediary region having a compositional gradient on this substrate and forming a germanium based p-i-n diode on the intermediary region.

REFERENCES:
patent: 3781612 (1973-12-01), Llacer et al.
patent: 4166218 (1979-08-01), Protic et al.
patent: 4183034 (1980-01-01), Burke et al.
patent: 4370510 (1983-01-01), Stirn
patent: 4415916 (1983-11-01), Protic et al.
Anderson, "Semiconductor Device", IBM Technical Disclosure Bulletin, vol. 3, No. 2, Jul. 1960, p. 44.

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