Fishing – trapping – and vermin destroying
Patent
1994-06-10
1995-03-28
Quach, T. N.
Fishing, trapping, and vermin destroying
437 24, 437192, 437200, 437933, 148DIG19, 148DIG32, 148DIG34, 148DIG58, H01L 21265, H01L 21283
Patent
active
054016746
ABSTRACT:
A method is provided for reducing growth of silicide and the temperatures necessary to produce silicide. Germanium is implanted at a concentration peak density depth below the midline and above the lower surface of a metal layer receiving the implant. Subsequent anneal causes germanide to occupy an area above growing silicide such that consumption of silicon atoms is reduced, and that silicide is formed to a controlled thickness.
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Ashburn, S. P., et al., "Formation of Titanium and Cobalt . . . ", J. Electronic Materials, vol. 21, No. 1, 1992, pp. 81-86.
Dehm, C., et al., "Shallow titanium--silicided p.sup.+ n . . . ", Appl. Phys. Lett., 60(10), 9 Mar. 1992, pp. 1214-1216.
Pfiester, J. R., et al., "A Novel 0.5-.mu.m n.sup..+-. p.sup.+ Poly . . . ", IEEE Trans. Elec. Dev., vol. 36, No. 11, Nov. 1989, pp. 2422-2432.
Agnello, P. D., et al., "Titanium Silicide/Germanide Formation . . . ", J. Electronic Materials, vol. 23, No. 4, 1994, pp. 413-421.
Anjum Mohammed
Burki Ibrahim
Christian Craig W.
Advanced Micro Devices
Daffer Kevin L.
Quach T. N.
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