Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – With current flow along specified crystal axis
Reexamination Certificate
2005-03-08
2005-03-08
Lebentritt, Michael S. (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
With current flow along specified crystal axis
C257S051000, C257S064000, C257S065000, C257S066000, C257S067000, C257S070000
Reexamination Certificate
active
06864520
ABSTRACT:
A method (and structure) for an electronic chip having at least one layer of material for which a carrier mobility of a first carrier type is higher in a first crystal surface than in a second crystal surface and for which a carrier mobility of a second carrier type is higher in the second crystal surface than the first crystal surface includes a first device having at least one component fabricated on the first crystal surface of the material, wherein an activity of the component of the first device involves primarily the first carrier type, and a second device having at least one component fabricated on the second crystal surface of the material, wherein an activity of the component of the second device involves primarily the second carrier type.
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PCT Written Opinion mailed May 11, 2004.
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Fischetti Massimo V.
Laux Steven E.
Solomon Paul M.
Wong Hon-Sum Philip
International Business Machines - Corporation
Lebentritt Michael S.
McGinn & Gibb PLLC
Menz Douglas
Salys, Esq. Casimer K.
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