Germanium doped light emitting diode bonding process

Details Germanium doped light emitting diode bonding process Germanium doped light emitting diode bonding process

1974-10-03

1976-10-19

DiPalma, Victor A.

Metal working

Method of mechanical manufacture

Electrical device making

29577, 228123, 228179, 357 67, H01L 2500, H01L 2715, H01L 21225

Patent

active

039862518

ABSTRACT:
A method for bonding a gallium-type light emitting diode (LED) to a metallized substrate interconnection member, such as, a header, or a strip. An LED wafer is subjected to premetallizing backside processing in order to prepare the surface for a metallizing deposition step. During metallization, the backside wafer is deposited with a gold-germanium or gold-silicon alloy. Thereafter, the wafer is heated in forming gas in order to alloy the gold-germanium or gold-silicon first layer to the wafer backside. Then, a second layer of gold-germanium or gold-silicon is evaporated over the alloyed first layer. The LED chip or die is then eutectically die bonded to a metallized substrate.

REFERENCES:
patent: 3460241 (1969-08-01), Ehrenberg
patent: 3484933 (1969-12-01), Hagon
patent: 3609472 (1971-09-01), Bailey
patent: 3702290 (1972-11-01), Yu et al.
patent: 3702787 (1972-11-01), Lowry et al.
patent: 3711745 (1973-01-01), Moroney
patent: 3716907 (1973-02-01), Anderson
patent: 3729807 (1973-05-01), Fujiwara

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