Germanium-containing silicon nitride film

Details Germanium-containing silicon nitride film Germanium-containing silicon nitride film

1977-01-04

1978-11-21

Smith, Ronald H.

Stock material or miscellaneous articles

Composite

Of bituminous or tarry residue

357 52, 428446, 428336, 427 94, 427255, 427272, 106 735, B05D 512, B32B 904, C04B 3516, H01L 2914

Patent

active

041268806

ABSTRACT:
A germanium-containing silicon nitride film has a germanium content of 0.5 to 10 atomic-% that of the silicon content. Since the film has a much smaller stress than a conventional silicon nitride (Si.sub.3 N.sub.4) film, it is very suitable as a mask for fabricating a semiconductor device and an insulating or a protective film for a semiconductor device.

REFERENCES:
patent: 3558348 (1977-01-01), Rand
patent: 3669693 (1972-06-01), Dalton
Westdorp et al., Stress Effects of Si.sub.3 N.sub.4 on Silicon, Symposium on Deposited Dielectric Films, Montreal 1968.
Carlsen, Mult. Dif. for Integrated Circuit Devices, I.B.M. Tech. Disclosure Bulletin, vol. 9, No. 10, Mar. 1967.

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