Germanium channel silicon MOSFET

Details Germanium channel silicon MOSFET Germanium channel silicon MOSFET

1989-05-15

1991-05-28

James, Andrew J.

357 16, 357 22, 357 58, H01L 2968, H01L 29161, H01L 2980, H01L 2912

Patent

active

050198823

ABSTRACT:
An alloy layer comprising germanium and silicon is grown on top of a silicon substrate. The alloy layer is kept thin enough for proper pseudomorphic, dislocation free growth. A layer of silicon is applied to the alloy layer. The initial silicon layer is from two to three times as thick as the alloy layer. Approximately the upper two-thirds of the silicon layer is oxidized, either thermally, anodically or by plasma anodization. The silicon layer that remains between the silicon dioxide and the alloy layer is kept thin enough so that a parasitic channel does not form on the interface between the silicon and the silicon dioxide. The germanium alloyed channel is thus suitably bounded by silicon crystalline structures on both of the channel layer surfaces. The barrier heights between silicon dioxide and silicon are very large thus providing good carrie confinement. A suitably applied voltage will result in a region of high mobility charge carriers at the interface between the alloy layer and the upper silicon layer.

REFERENCES:
patent: 4529455 (1985-07-01), Bean et al.
patent: 4556895 (1985-12-01), Ohata
patent: 4827320 (1989-05-01), Morkoc et al.
"Growth and Properties of Si/SiGe Superlattices", B. Kasper, pp. 703-716, MSS-II Proceedings, Kyoto, Japan.
"Measurement of the Band Gap of Ge.sub.x Si.sub.1-x /Si Strained-Layer Heterostructures", Applied Physics Letters, 47, p. 1333 (1985), D. V. Lang et al.
"Two-Dimensional Electron Systems in Si/Si.sub.x Ge.sub.1-x Strained Layer Superlattices", by G. Abstreiter et al., MSS-II Proceedings, Kyoto, Japan, Sep. 1985, p. 717.

Affiliated with

Also associated with

Rating

Germanium channel silicon MOSFET does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Germanium channel silicon MOSFET, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Germanium channel silicon MOSFET will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-38950