Geometry dependent doping and electronic devices produced thereb

Details Geometry dependent doping and electronic devices produced thereb Geometry dependent doping and electronic devices produced thereb

1989-12-21

1991-11-12

James, Andrew J.

Coherent light generators

Particular component circuitry

Optical pumping

357 16, 357 17, 357 35, 357 60, 372 46, 372 47, H01L 2712

Patent

active

050652001

ABSTRACT:
The method and product of laterally defining semiconductor structures using geometry depending doping. A compound semiconductor substrate, for example, InP or GaAs, is formed with a groove in a predetermined direction. One or more epitaxial layers are deposited on both the grooved portion and the planar portions of the substrate and include both n-type and p-type dopants. The incorporation rates of the dopants into the deposited layers depend upon the crystalline orientation of the planar surface or the sidewalls of the groove. Thereby, the planar portion may be formed of one conductivity type and the groove with the other. The invention is particularly useful for defining the current structure in a semiconductor laser.

REFERENCES:
patent: 4775882 (1988-10-01), Miller et al.
patent: 4785457 (1988-11-01), Asbeck et al.
patent: 4805179 (1989-02-01), Harder et al.
patent: 4839307 (1989-06-01), Imanaka et al.
patent: 4932033 (1990-06-01), Miyazawa et al.
Kapon et al., "Lateral Patterning of Semiconductor Superlattice Heterostructures by Epitaxial Growth on Nonplanar Substrates", Proceedings of SPIE, Mar. 1988, vol. 944, pp. 80-91.
Jaeckel et al., "High-Power Fundamental Mode AlGaAS Quantum Well Channeled Substrate Laser Growth by Molecular Beam Epitaxy", Applied Physics Letters, Sep. 1989, vol. 55, pp. 1059-1061.
Kamon et al., "Orientation Dependence of GaAs Growth in Low-Pressure OMVPE", Journal of Crystal Growth, 1984, vol. 84, pp. 126-132.
Wang et al., "Crystal Orientation Dependence of Silicon Doping in Molecular Beam Epitaxial AlGaAs/GaAs Heterostructures", Applied Physics Letters, Oct. 1985, pp. 826-828.
T. F. Kuech and E. Veuhoff, "Mechanism of Carbon Incorporation in MOCVD GaAs", Journal of Crystal Growth, 1984, vol. 68, pp. 148-156.

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