Gentle chemical mechanical polishing (CMP) liftoff process

Details Gentle chemical mechanical polishing (CMP) liftoff process Gentle chemical mechanical polishing (CMP) liftoff process

2007-05-22

2007-05-22

Ackun, Jr., Jacob K. (Department: 3723)

Abrading

Abrading process

Glass or stone abrading

C451S059000

Reexamination Certificate

active

11034340

ABSTRACT:
A method for chemical mechanical polishing (CMP) wafers having high aspect ratio surface topography. A wafer is positioned on a plate. A polishing pad is coupled to a platen. A polishing solution (e.g., slurry) is added between the polishing pad and the wafer. CMP is performed on the wafer by creating a relative movement between the polishing pad and the wafer. The polishing pad removes substantially all residual material from the channels. To accomplish this, the polishing pad has a compressibility of at least 5% at a polishing pressure of about 4 psi.

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