Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1986-01-28
1987-05-05
Chaudhuri, Olik
Metal working
Method of mechanical manufacture
Assembling or joining
29586, 148183, 148DIG119, 228123, H01L 2118
Patent
active
046620630
ABSTRACT:
A process for forming low resistance ohmic contacts on indium phosphide (InP) avoids the usual problem of high temperature annealing. The method comprises passing a current between two contacts of a suitably chosen metallic conductor that is doped so as to be the same conductivity type as the underlining semiconductor. Passage of the current causes the contacts to combine with the semiconductor via field assisted thermal diffusion.
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Collins David A.
Lile Derek L.
Beers Robert F.
Chaudhuri Olik
Fendelman Harvey
Johnston Ervin F.
The United States of America as represented by the Department of
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