Generation and applications of negative dielectric constant...

Semiconductor device manufacturing: process – Direct application of electrical current

Reexamination Certificate

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C438S022000, C438S024000

Reexamination Certificate

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07611969

ABSTRACT:
A negative dielectric is induced by the application of a dc bias-electric field in aggregates of oxide nano-particles whose surfaces have been specially treated. The magnitude of the dielectric constant and the frequency where the negative dielectric constant occurs can be adjusted. Such material systems have profound implications in novel devices as well as in science development, e.g. unusual wave propagation, secured communication and ultra-high temperature superconductivity.

REFERENCES:
patent: 2003/0157272 (2003-08-01), Tonai et al.
patent: WO 03/075291 (2003-09-01), None
Klimov et al., The Use of the Relativistic Effect for Obtaining Negative Permittivity, International Conference on Antenna Theory and Techniques, Sept. 9-12, 2003,Sevastopol, Ukraine, pp. 171-172.

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