Semiconductor device manufacturing: process – Direct application of electrical current
Reexamination Certificate
2006-02-17
2009-11-03
Vu, Hung (Department: 2811)
Semiconductor device manufacturing: process
Direct application of electrical current
C438S022000, C438S024000
Reexamination Certificate
active
07611969
ABSTRACT:
A negative dielectric is induced by the application of a dc bias-electric field in aggregates of oxide nano-particles whose surfaces have been specially treated. The magnitude of the dielectric constant and the frequency where the negative dielectric constant occurs can be adjusted. Such material systems have profound implications in novel devices as well as in science development, e.g. unusual wave propagation, secured communication and ultra-high temperature superconductivity.
REFERENCES:
patent: 2003/0157272 (2003-08-01), Tonai et al.
patent: WO 03/075291 (2003-09-01), None
Klimov et al., The Use of the Relativistic Effect for Obtaining Negative Permittivity, International Conference on Antenna Theory and Techniques, Sept. 9-12, 2003,Sevastopol, Ukraine, pp. 171-172.
Chen Feng
Chu Ching-Wu
Shulman Jason
Tsui Stephen
Xue Yu-Yi
Akin Gump Strauss Hauer & Feld & LLP
University of Houston
Vu Hung
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