Generating simulated diffraction signal using a dispersion...

Data processing: structural design – modeling – simulation – and em – Simulating nonelectrical device or system

Reexamination Certificate

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C703S001000, C703S002000, C703S013000, C702S001000, C702S040000, C702S127000, C702S159000, C702S189000, C438S014000, C438S016000, C356S300000, C356S306000

Reexamination Certificate

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08069020

ABSTRACT:
A first wafer is fabricated using a first value for a process parameter specifying a process condition in fabricating the structure. A first value of a dispersion is measured from the first wafer. A second wafer is fabricated using a second value for the process parameter. A second value of the dispersion is measured from the second wafer. A third wafer is fabricated using a third value for the process parameter. The first, second, and third values for the process parameter are different from each other. A third value of the dispersion is measured from the third wafer. A dispersion function is defined to relate the process parameter to the dispersion using the first, second, and third values for the process parameter and the measured first, second, and third values of the dispersion. The simulated diffraction signal is generated using the defined dispersion function. The simulated diffraction signal is stored.

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