Generating high purity ions by non-thermal excimer laser process

Details Generating high purity ions by non-thermal excimer laser process Generating high purity ions by non-thermal excimer laser process

1985-04-10

1987-06-02

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576T, 148175, 148187, 148DIG83, 427 38, 427 531, H01L 21265, B01J 110

Patent

active

046700641

ABSTRACT:
A semiconductor ion implantation processing technique is disclosed for implanting high purity, high flux density ions in a semiconductor wafer substrate. A reactant gas is irradiated with excimer pulsed ultraviolet laser radiation at a discrete designated pulsed wavelength corresponding to a discrete designated ionization excitation energy of the gas photochemically breaking bonds of the gas to nonthermally photolytically ionize the gas. The ions are then accelerated by an electric field for subsequent implantation into a surface.

REFERENCES:
patent: 4088553 (1978-05-01), Rockwood
patent: 4463028 (1984-07-01), Laude
patent: 4529617 (1985-07-01), Chevenas-Paule et al.
Young et al, Solid St. Technology, 26 (Nov. 1983) p. 183.
Deutsch in "Laser . . . Photochemical Processing . . . Devices" ed. Osgood et al, North-Holland, N.Y. 1982 p. 225.
Deutsch et al Appl. Phys. Letts. 38 (1981) 144.
Andreatta et al Appl. Phys. Letts. 40 (1982) 183.

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