GeBPSG top clad for a planar lightwave circuit

Details GeBPSG top clad for a planar lightwave circuit GeBPSG top clad for a planar lightwave circuit

2007-01-09

2007-01-09

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C427S255350

Reexamination Certificate

active

09917438

ABSTRACT:
A method of depositing a top clad layer for an optical waveguide of a planar lightwave circuit. A GeBPSG top clad layer for an optical waveguide structure of a planar lightwave circuit is fabricated such that the top clad layer comprises doped silica glass, wherein the dopant includes Ge (Germanium), P (Phosphorus), and B (Boron). In depositing a top clad layer for the optical waveguide, three separate doping gasses (e.g., GeH4, PH3, and B2H6) are added during the PECVD (plasma enhanced chemical vapor deposition) process to make Ge, P and B doped silica glass (GeBPSG). The ratio of the Ge, P, and B dopants is configured to reduce the formation of crystallization areas within the top clad layer and maintain a constant refractive index within the top clad layer across an anneal temperature range. A thermal anneal process for the top clad layer can be a temperature within a range of 950C to 1050C. The GeBPSG top clad layer reduces the insertion loss of passive arrayed waveguide grating devices and active planar lightwave circuit devices.

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