Ge-Si quantum well structures

Details Ge-Si quantum well structures Ge-Si quantum well structures

2005-09-19

2009-10-06

Wood, Kevin S (Department: 2874)

Optical waveguides

Planar optical waveguide

C385S131000, C257S019000

Reexamination Certificate

active

07599593

ABSTRACT:
Si—Ge quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the Γ point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si1−xGexmaterial system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. A preferred method of providing such quantum well structures on a substrate (e.g., a silicon substrate) is to grow a first Ge-rich Si—Ge buffer layer on the substrate, and then anneal the resulting layered structure. In many cases it is further preferred to grow a second Ge-rich Si—Ge buffer layer on top of the first buffer layer and anneal the resulting layered structure.

REFERENCES:
patent: 5886361 (1999-03-01), Presting et al.
patent: 6784466 (2004-08-01), Chu et al.
patent: 2005/0141801 (2005-06-01), Gardner
Richard A. Soref, “Silicon-based group IV heterostructures for optoelectronic applications,” J. Vac. Sci. Techno. A 14(3), May/Jun. 1996, pp. 913-918.

Affiliated with

Also associated with

Rating

Ge-Si quantum well structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ge-Si quantum well structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ge-Si quantum well structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4130738