Ge imager for short wavelength infrared

Details Ge imager for short wavelength infrared Ge imager for short wavelength infrared

2011-03-15

2011-03-15

Garber, Charles D (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S616000, C257SE31054, C250S332000

Reexamination Certificate

active

07906825

ABSTRACT:
A germanium (Ge) short wavelength infrared (SWIR) imager and associated fabrication process are provided. The imager comprises a silicon (Si) substrate with doped wells. An array of pin diodes is formed in a relaxed Ge-containing film overlying the Si substrate, each pin diode having a flip-chip interface. There is a Ge/Si interface, and a doped Ge-containing buffer interposed between the Ge-containing film and the Ge/Si interface. An array of Si CMOS readout circuits is bonded to the flip-chip interfaces. Each readout circuit has a zero volt diode bias interface.

REFERENCES:
patent: 5185272 (1993-02-01), Makiuchi et al.
patent: 7453129 (2008-11-01), King et al.
patent: 2006/0267054 (2006-11-01), Martin et al.

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