Gaussian profile promoting cavity for semiconductor laser

Details Gaussian profile promoting cavity for semiconductor laser Gaussian profile promoting cavity for semiconductor laser

1998-01-28

1999-12-14

Davie, James W.

Coherent light generators

Particular resonant cavity

372 99, 372108, H01S 308

Patent

active

060027037

ABSTRACT:
A system and method for generating a laser beam from a semiconductor laser in order to eliminate or substantially reduce filamentation of the laser beam. The system and method utilizes an external optical member such as a reflector to improve or enhance the overall laser beam quality produced. The reflector has a Gaussian intensity profile promoting cavity such as a parabolic cavity, with the cavity having a focal length a preselected distance from the cavity surface. The semiconductor laser is positioned such that the facet of the semiconductor laser is at the focal length distance from the cavity surface. The cavity has a mode-selecting reflective surface such that the beam has a substantially Gaussian intensity profile. A beam splitter can be optionally employed between the semiconductor laser and the optical reflector for certain applications if desired. Alternatively, an external digital optics member can be employed with a semiconductor laser to produce a beam with a substantially Gaussian intensity profile.

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