Gateless thyristor combining high and low density regions of emi

Details Gateless thyristor combining high and low density regions of emi Gateless thyristor combining high and low density regions of emi

1995-06-07

1998-02-17

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

257109, 257110, 257111, 257173, H01L 2974, H01L 31111

Patent

active

057194130

ABSTRACT:
A gateless thyristor or a gateless triac with shorting holes having a sharp switching threshold and a high current value I.sub.H includes, a first area having a first density of shorting holes and a second area having a second density of shorting holes lower than the first density.

REFERENCES:
patent: 4060825 (1977-11-01), Schlegel
patent: 4599633 (1986-07-01), Thire et al.
patent: 5473170 (1995-12-01), Beruser

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