Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1984-09-06
1987-01-20
Edlow, Martin H.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 55, 357 45, 357 40, 307304, 324 78R, 324178, H01L 2948, H01L 2956, H01L 2964
Patent
active
046383417
ABSTRACT:
The gated Transmission Line Model (GTLM) structure is a novel characterization device and measurement tool for integrated circuit process monitoring. This test structure has Schottky gates between the ohmic contacts of a TLM pattern. The gate lengths are varied and the gate-to- ohmic separations are kept constant to provide an accurate determination of several important FET channel parameters. It offers a precise method for measuring the FET source resistance which requires no parameter fitting and which works equally well on planar, self-aligned gate, and recessed gate FET's. In addition, the GTLM structure offers the only available means to measure sheet resistance of enhancement-mode FET channels. The gated-TLM structure can also be used to find the effective free surface potential. The structure may be combined with capacitance-voltage analysis or geometric magnetoresistance analysis to create mobility and doping profile of actual FET channels. Further, the GTLM structure may be implemented in any existing semiconductor FET technology, including silicon, GaAs, and modulation-doped structures.
REFERENCES:
patent: 4160259 (1979-07-01), Nishizawa
patent: 4266333 (1981-05-01), Reichert
patent: 4286276 (1981-08-01), Diamond
patent: 4336495 (1982-06-01), Hapke
patent: 4422087 (1983-12-01), Ronen
patent: 4430583 (1984-02-01), Shoji
patent: 4459556 (1984-07-01), Nanbu et al.
patent: 4459605 (1984-07-01), Rice
H. Fukui, "Determination of the Basic Device Parameters of a GaAs MESFET", Bell Sys. Tech. Journal, pp. 771-797, Mar. '79.
K. Lee et al., "Low Field Mobility in GaAs Ion-implanted FETs", IEEE Ed-31, No. 3, pp. 390-393, Mar. '84.
Osburn, "Measuring Breakdown Voltage Distribution of an Array of MOSFET's", IBM Technical Disclosure Bulletin, vol. 14, No. 2, Jul. 1971, pp. 502-503.
Fukui, "Determination of the Basic Device Parameters of a GaAs MESFET", The Bell System Technical Journal, vol. 58, No. 3, Mar. 1979, pp. 779-781.
Chen et al., "Schottky Transistor Logic Base Extension Cell," IBM Technical Disclosure Bulletin, vol. 20, No. 1, Jun. 1977, pp. 182-183.
Baier Steven M.
Cirillo, Jr. Nicholas C.
Hanka Steven A.
Shur Michael S.
Dahle Omund R.
Edlow Martin H.
Honeywell Inc.
Mintel William A.
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