Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device
Patent
1993-11-12
1996-04-02
Callahan, Timothy P.
Miscellaneous active electrical nonlinear devices, circuits, and
Gating
Utilizing three or more electrode solid-state device
327428, 327429, 327439, 327440, 327442, H03K 1768, H03K 1760
Patent
active
055044514
ABSTRACT:
An integrated process is shown for the fabrication of one or more of the following devices: (n-) and (p-) channel low-voltage field-effect logic transistors (556/403); (n-) and (p-) channel high-voltage insulated-gate field-effect transistors (557, 405) for the gating of an EEPROM memory array or the like; a Fowler-Nordheim tunneling EEPROM cell (558); (n-) and (p-) channel drain-extended insulated-gate field-effect transistors (407, 560); vertical and lateral annular DMOS transistors (409, 561); a Schottky diode (411); and a FAMOS EPROM cell (562). A "non-stack" double-level poly EEPROM cell (676) with enhanced reliability (676) is also disclosed.
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Smayling Michael C.
Soobik Lembit
Brady III W. James
Callahan Timothy P.
Donaldson Richard
Lam T.
Texas Instruments Incorporated
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